Scopus İndeksli Yayınlar Koleksiyonu

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https://hdl.handle.net/20.500.12402/1912

Yazar "Akkılıç, Kemal" Scopus İndeksli Yayınlar Koleksiyonu seçeneğine göre listele

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  • Küçük Resim
    Öğe
    Characterization of an Au/n-Si photovoltaic structure with an organic thin film
    (Elsevier, 2013-08) Özaydın, Cihat; Akkılıç, Kemal; İlhan, Salih; Rüzgar, Şerif; Güllü, Ömer; Temel, Hamdi
    We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Φb of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 kΩ and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 μA under light of 8 mW/cm2.
  • Küçük Resim
    Öğe
    The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application
    (Elsevier, 2016-05) Özaydın, Cihat; Güllü, Ömer; Pakma, Osman; İlhan, Salih; Akkılıç, Kemal
    In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current-voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φb) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.