Characterization of an Au/n-Si photovoltaic structure with an organic thin film
Yükleniyor...
Tarih
2013-08
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Φb of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 kΩ and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 μA under light of 8 mW/cm2.
Açıklama
Anahtar Kelimeler
Devices, Organics, Schottky Barrier, Surfaces and Interfaces
Kaynak
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
16
Sayı
4
Künye
Özaydın, C., Akkılıç, K., İlhan, S., Rüzgar, Ş, Güllü, Ö, Temel, H. (2013). Characterization of an Au/n-Si photovoltaic structure with an organic thin film. Materials Science in Semiconductor Processing, 16(4), pp. 1125-1130. https://doi.org/10.1016/j.mssp.2013.03.002
