N-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties
Küçük Resim Yok
Tarih
2010-03
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Journal of Vacuum Science & Technology B
Erişim Hakkı
info:eu-repo/semantics/restrictedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
The rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film increases the effective barrier height by influencing the space charge region of the n-type InP. The barrier height and ideality factor values for this structure have been obtained as 0.75 eV and 1.93 from the forward bias current-voltage characteristics, respectively. By using capacitance-voltage characteristics at 1 MHz, the barrier height and the carrier concentration values have been calculated as 0.93 eV and 5.13×1015 cm−3, respectively. The energy distributions of the interface states and their relaxation times have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics. Moreover, it was seen that both the interface-state density and the relaxation time of the interface states decreased with bias voltage from experimental results.
Açıklama
Anahtar Kelimeler
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
28
Sayı
3
Künye
Güllü, Ö., Turut, A. (2010). N-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 28(3). pp.466. https://dx.doi.org/10.1116/1.3377141
