N-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTurut, Abdulmecit
dc.date.accessioned2021-04-14T10:42:20Z
dc.date.available2021-04-14T10:42:20Z
dc.date.issued2010-03en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film increases the effective barrier height by influencing the space charge region of the n-type InP. The barrier height and ideality factor values for this structure have been obtained as 0.75 eV and 1.93 from the forward bias current-voltage characteristics, respectively. By using capacitance-voltage characteristics at 1 MHz, the barrier height and the carrier concentration values have been calculated as 0.93 eV and 5.13×1015 cm−3, respectively. The energy distributions of the interface states and their relaxation times have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics. Moreover, it was seen that both the interface-state density and the relaxation time of the interface states decreased with bias voltage from experimental results.en_US
dc.identifier.citationGüllü, Ö., Turut, A. (2010). N-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 28(3). pp.466. https://dx.doi.org/10.1116/1.3377141en_US
dc.identifier.issn10711023
dc.identifier.issue3en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage466en_US
dc.identifier.urihttps://dx.doi.org/10.1116/1.3377141
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2880
dc.identifier.volume28en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherJournal of Vacuum Science & Technology Ben_US
dc.relation.isversionof10.1116/1.3377141en_US
dc.relation.journalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.titleN-type InP Schottky diodes with organic thin layer: Electrical and interfacial propertiesen_US
dc.typeArticleen_US

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Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu
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