Electrical parameters of safranine T N silicon contacts
Küçük Resim Yok
Tarih
2015
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Yayıncı
İstanbul University
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, it has been investigated current-voltage (I-V) andcapacitance-voltage-frequency (C-V-f)
characteristics of the Al/SafranineT(ST)/n-Si structure. The values of the ideality factor, series resistance and
barrier height calculated by using different methods were compared. It was seen that there was an agreement with
each other. Also, it was seen that the barrier height value for our device was higher than one value of 0.50 eV of
conventional Al/n-Si Schottky contact. The change in the barrier height value of the device was ascribed to ST thin
layer modifying the effective barrier height by influencing the space charge region of the Si inorganic
semiconductor. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently
large voltages have been attributed to the effect of series resistance. Thus, the concavity of the forward bias
current-voltage characteristics increases with increasing series resistance value. It has been seen that the values of
capacitance are almost independent to a certain value of frequency, after this value, the capacitance decreases with
increasing frequency. The higher values of capacitance at low frequencies have been attributed to the excess
capacitance resulting from the interface states in equilibrium with the n-Silicon that could follow the alternating
current signal.
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Künye
Güllü, Ö., Arsel, İ., Özkan, S., Özaydın, C., Pakma, O., Turut, A. (2015). Electrical parameters of safranine T N silicon contacts. 9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015, İstanbul.
