Electrical parameters of safranine T N silicon contacts

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dc.authorid0000-0002-3785-6190en_US
dc.authorid0000-0001-6690-0122en_US
dc.authorid0000-0002-3098-0973en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorArsel, İsmail
dc.contributor.authorÖzkan, Samet
dc.contributor.authorÖzaydın, Cihat
dc.contributor.authorPakma, Osman
dc.contributor.authorTurut, Abdülmecit
dc.date.accessioned2021-04-16T09:23:11Z
dc.date.available2021-04-16T09:23:11Z
dc.date.issued2015en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.departmentBatman Üniversitesi Mühendislik - Mimarlık Fakültesi Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractIn this work, it has been investigated current-voltage (I-V) andcapacitance-voltage-frequency (C-V-f) characteristics of the Al/SafranineT(ST)/n-Si structure. The values of the ideality factor, series resistance and barrier height calculated by using different methods were compared. It was seen that there was an agreement with each other. Also, it was seen that the barrier height value for our device was higher than one value of 0.50 eV of conventional Al/n-Si Schottky contact. The change in the barrier height value of the device was ascribed to ST thin layer modifying the effective barrier height by influencing the space charge region of the Si inorganic semiconductor. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently large voltages have been attributed to the effect of series resistance. Thus, the concavity of the forward bias current-voltage characteristics increases with increasing series resistance value. It has been seen that the values of capacitance are almost independent to a certain value of frequency, after this value, the capacitance decreases with increasing frequency. The higher values of capacitance at low frequencies have been attributed to the excess capacitance resulting from the interface states in equilibrium with the n-Silicon that could follow the alternating current signal.en_US
dc.identifier.citationGüllü, Ö., Arsel, İ., Özkan, S., Özaydın, C., Pakma, O., Turut, A. (2015). Electrical parameters of safranine T N silicon contacts. 9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015, İstanbul.en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2914
dc.language.isoenen_US
dc.publisherİstanbul Universityen_US
dc.relation.journal9th International Physics Conference of the Balkan Physical Union, 24-27 August 2015en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleElectrical parameters of safranine T N silicon contactsen_US
dc.typeConference Objecten_US

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