Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures
Küçük Resim Yok
Tarih
2012-02-15
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
American Institute of Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent rectifying behavior and that this structure increases the barrier height (φ b0). The main electrical parameters of these structures, such as ideality factor (n), barrier height, and average series resistance values were found to be 1.087, 0.726 eV, and 66.92Ω. This value of n was attributed to the presence of an interfacial insulator layer at the Ag/p-InP interface and the density of interface states (N ss) localized at the InP/DNA interface. The values of N ss localized at the InP/DNA interface were found at 0.675-E v in the 1.38 × 10 12 eV -1 cm -2.
Açıklama
Anahtar Kelimeler
Barrier Heights, Current Density-Voltage Characteristics, Density of Interface State, Electrical Parameter
Kaynak
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
111
Sayı
4
Künye
Güllü, Ö, Pakma, O., Türüt, A. (2012). Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures. Journal of Applied Physics, 111(4). https://doi.org/10.1063/1.3684989
