Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures

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dc.authorid0000-0002-3785-6190en_US
dc.authorid0000-0002-3098-0973en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorPakma, Osman
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2019-07-05T11:09:45Z
dc.date.available2019-07-05T11:09:45Z
dc.date.issued2012-02-15en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent rectifying behavior and that this structure increases the barrier height (φ b0). The main electrical parameters of these structures, such as ideality factor (n), barrier height, and average series resistance values were found to be 1.087, 0.726 eV, and 66.92Ω. This value of n was attributed to the presence of an interfacial insulator layer at the Ag/p-InP interface and the density of interface states (N ss) localized at the InP/DNA interface. The values of N ss localized at the InP/DNA interface were found at 0.675-E v in the 1.38 × 10 12 eV -1 cm -2.en_US
dc.identifier.citationGüllü, Ö, Pakma, O., Türüt, A. (2012). Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures. Journal of Applied Physics, 111(4). https://doi.org/10.1063/1.3684989en_US
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1063/1.3684989
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2215
dc.identifier.volume111en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionof10.1063/1.3684989en_US
dc.relation.journalJournal of Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectBarrier Heightsen_US
dc.subjectCurrent Density-Voltage Characteristicsen_US
dc.subjectDensity of Interface Stateen_US
dc.subjectElectrical Parameteren_US
dc.titleCurrent density-voltage analyses and interface characterization in Ag/DNA/p-InP structuresen_US
dc.typeArticleen_US

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