Improvement of diode parameters in Al/n-Si schottky diodes with coronene interlayer using variation of the illumination intensity
Yükleniyor...
Tarih
2017-12-15
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current–voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094 Ω at dark and 100 mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012 eV−1 cm−2 at dark and 100 mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.
Açıklama
Anahtar Kelimeler
Barrier Height, Coronene, Ideality Factor, Illumination Intensity, Organic Semiconductor, Schottky Diode
Kaynak
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
527
Sayı
Künye
Pakma, O., Çavdar, Ş., Koralay, H., Tuğluoğlu, N., Yüksel, Ö., F. (2017). Improvement of diode parameters in Al/n-Si schottky diodes with coronene interlayer using variation of the illumination intensity. Physica B: Condensed Matter, 527, pp. 1-6. https://doi.org/10.1016/j.physb.2017.09.101
