Improvement of diode parameters in Al/n-Si schottky diodes with coronene interlayer using variation of the illumination intensity

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dc.authorid0000-0002-3098-0973en_US
dc.authorid0000-0001-6079-7048en_US
dc.authorid0000-0001-7893-344Xen_US
dc.authorid0000-0001-9428-4347en_US
dc.authorid0000-0001-8093-2331en_US
dc.contributor.authorPakma, Osman
dc.contributor.authorÇavdar, Şükrü
dc.contributor.authorKoralay, Haluk
dc.contributor.authorTuğluoğlu, Nihat
dc.contributor.authorYüksel, Ömer Faruk
dc.date.accessioned2021-04-14T08:57:45Z
dc.date.available2021-04-14T08:57:45Z
dc.date.issued2017-12-15en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current–voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094 Ω at dark and 100 mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012 eV−1 cm−2 at dark and 100 mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.en_US
dc.identifier.citationPakma, O., Çavdar, Ş., Koralay, H., Tuğluoğlu, N., Yüksel, Ö., F. (2017). Improvement of diode parameters in Al/n-Si schottky diodes with coronene interlayer using variation of the illumination intensity. Physica B: Condensed Matter, 527, pp. 1-6. https://doi.org/10.1016/j.physb.2017.09.101en_US
dc.identifier.endpage6en_US
dc.identifier.issn0921-4526
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2017.09.101
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2873
dc.identifier.volume527en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.physb.2017.09.101en_US
dc.relation.journalPhysica B: Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectBarrier Heighten_US
dc.subjectCoroneneen_US
dc.subjectIdeality Factoren_US
dc.subjectIllumination Intensityen_US
dc.subjectOrganic Semiconductoren_US
dc.subjectSchottky Diodeen_US
dc.titleImprovement of diode parameters in Al/n-Si schottky diodes with coronene interlayer using variation of the illumination intensityen_US
dc.typeArticleen_US

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