Electrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodes
Küçük Resim Yok
Tarih
2015-05
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Dumlupınar Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In this work, we have studied the electrical characteristics of the Al/CR/p-Si MIS
Schottky structures formed by coating of the organic material directly on p-Si substrate. It has
been seen that the CR thin film on the p-Si substrate has indicated a good rectifying behavior.
The barrier height and the ideality factor of the device have been calculated from the I-V
characteristic. We have also studied the suitability and possibility of the MIS diodes for use in
barrier modification of Si MS diodes. In addition, we have compared the parameters of the
Al/CR/p-Si MIS Schottky diodes with those of conventional Al/p-Si MS diodes. We have
observed that the
b
value of 0.77 eV obtained for the Al/CR/p-Si device was significantly
larger than BH value of the conventional Al/p-Si MS contact. Thus, the modification of the
interfacial potential barrier for metal/Si diodes has been achieved by using the CR organic
interlayer. This was attributed to the fact that the CR interlayer increased the effective
b
by
influencing the space charge region of Si. The interface-state density of the MIS diode was
found to vary from 1.24×1013 eV-1
cm-2
to 2.44×1012 eV-1
cm-2.
Açıklama
Anahtar Kelimeler
MIS Diode, Schottky Barrier, Ideality Factor, Congo Red, Dye
Kaynak
WoS Q Değeri
Scopus Q Değeri
Cilt
Sayı
Künye
Güllü, Ö., Pakma, O., Turut, A., Arsel, İ. (2015). Electrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodes. Adım Fizik Günleri IV, 28 – 29 Mayıs 2015, Kütahya
