Electrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodes

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorPakma, Osman
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorArsel, İsmail
dc.date.accessioned2021-04-19T10:56:32Z
dc.date.available2021-04-19T10:56:32Z
dc.date.issued2015-05en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this work, we have studied the electrical characteristics of the Al/CR/p-Si MIS Schottky structures formed by coating of the organic material directly on p-Si substrate. It has been seen that the CR thin film on the p-Si substrate has indicated a good rectifying behavior. The barrier height and the ideality factor of the device have been calculated from the I-V characteristic. We have also studied the suitability and possibility of the MIS diodes for use in barrier modification of Si MS diodes. In addition, we have compared the parameters of the Al/CR/p-Si MIS Schottky diodes with those of conventional Al/p-Si MS diodes. We have observed that the b value of 0.77 eV obtained for the Al/CR/p-Si device was significantly larger than BH value of the conventional Al/p-Si MS contact. Thus, the modification of the interfacial potential barrier for metal/Si diodes has been achieved by using the CR organic interlayer. This was attributed to the fact that the CR interlayer increased the effective b by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24×1013 eV-1 cm-2 to 2.44×1012 eV-1 cm-2.en_US
dc.identifier.citationGüllü, Ö., Pakma, O., Turut, A., Arsel, İ. (2015). Electrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodes. Adım Fizik Günleri IV, 28 – 29 Mayıs 2015, Kütahyaen_US
dc.identifier.urihttps://adimfizik4.dpu.edu.tr/
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2934
dc.language.isoenen_US
dc.publisherDumlupınar Üniversitesien_US
dc.relation.journalAdım Fizik Günleri IV, 28 – 29 Mayıs 2015en_US
dc.relation.publicationcategoryKonferans Öğesi - Ulusal - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectMIS Diodeen_US
dc.subjectSchottky Barrieren_US
dc.subjectIdeality Factoren_US
dc.subjectCongo Reden_US
dc.subjectDyeen_US
dc.titleElectrical characteristics of the Al/Congo Red (CR)/p-Si semiconductor diodesen_US
dc.typeConference Objecten_US

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Fen - Edebiyat Fakültesi, Fizik Bölümü, Bildiri Metinleri Koleksiyonu