Characterization of an Au/n-Si photovoltaic structure with an organic thin film

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dc.authorid0000-0003-0779-2744en_US
dc.authorid0000-0002-3785-6190en_US
dc.authorid0000-0001-9225-7425en_US
dc.contributor.authorÖzaydın, Cihat
dc.contributor.authorAkkılıç, Kemal
dc.contributor.authorİlhan, Salih
dc.contributor.authorRüzgar, Şerif
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTemel, Hamdi
dc.date.accessioned2019-07-05T10:41:37Z
dc.date.available2019-07-05T10:41:37Z
dc.date.issued2013-08en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.departmentBatman Üniversitesi Mühendislik - Mimarlık Fakültesi Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractWe demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal-semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Φb of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 kΩ and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 μA under light of 8 mW/cm2.en_US
dc.description.sponsorshipThis work is partly supported by Turkish of Prime Ministry State Planning Organization (DPT) (Project number:2010BKV1285, Project Title: "Batman Üniversitesi Merkezi Laboratuvarının Kurulması") and Dicle University Research Project Found (Project number: DÜBAP 10-ZEF-126).en_US
dc.identifier.citationÖzaydın, C., Akkılıç, K., İlhan, S., Rüzgar, Ş, Güllü, Ö, Temel, H. (2013). Characterization of an Au/n-Si photovoltaic structure with an organic thin film. Materials Science in Semiconductor Processing, 16(4), pp. 1125-1130. https://doi.org/10.1016/j.mssp.2013.03.002en_US
dc.identifier.endpage1130en_US
dc.identifier.issn1369-8001
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1125en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2013.03.002
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2213
dc.identifier.volume16en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.mssp.2013.03.002en_US
dc.relation.journalMaterials Science in Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectDevicesen_US
dc.subjectOrganicsen_US
dc.subjectSchottky Barrieren_US
dc.subjectSurfaces and Interfacesen_US
dc.titleCharacterization of an Au/n-Si photovoltaic structure with an organic thin filmen_US
dc.typeArticleen_US

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