Morphological, structural and optical characteristics of graphene oxide layers and metal/interlayer/semiconductor photovoltaic diode application
Küçük Resim Yok
Tarih
2018
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
National Institute of Research and Development for Optoelectronics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
This work describes the optical, morphological and structural characterizations of graphene oxide (GO) layers grown by drop casting and annealing process. UV-vis optical measurement shows that the values of direct and indirect optical gap energy of the GO film are 3.89 eV and 3.21 eV, respectively. The graphene oxide (GO) layer has been placed in the metal/ interlayer /semiconductor (MIS) diodes (total 17 devices) on p-Si wafers. The graphene oxide diodes give a better barrier height enhancement as compared with the conventional diodes. The value of homogeneous barrier height for Al/GO/p-Si MIS junctions was extracted as 0.74 eV. The diodes were also investigated under 300 watt light illumination for photovoltaic applications. Additionally, interfacial properties of the MIS diode with GO interlayer were determined. It has been seen that the capacitance of the device changes as a function of gate voltage and signal frequency from the capacitance-frequency measurements. It has also been reported that the interfacial trap charges reduce the capacitance with increasing frequency values.
Açıklama
Anahtar Kelimeler
Band Gap, Graphene Oxide, MIS Diode, Schottky Barrier, Thin Films
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
Q3
Cilt
14
Sayı
2
Künye
Güllü, Ö., Çankaya, M.(2018). Morphological, structural and optical characteristics of graphene oxide layers and metal/interlayer/semiconductor photovoltaic diode application. Journal of Ovonic Research, 14(2), pp. 129-144.
