Morphological, structural and optical characteristics of graphene oxide layers and metal/interlayer/semiconductor photovoltaic diode application

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.authorid0000-0001-7432-548Xen_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorÇankaya, Murat
dc.date.accessioned2019-07-05T08:47:08Z
dc.date.available2019-07-05T08:47:08Z
dc.date.issued2018en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThis work describes the optical, morphological and structural characterizations of graphene oxide (GO) layers grown by drop casting and annealing process. UV-vis optical measurement shows that the values of direct and indirect optical gap energy of the GO film are 3.89 eV and 3.21 eV, respectively. The graphene oxide (GO) layer has been placed in the metal/ interlayer /semiconductor (MIS) diodes (total 17 devices) on p-Si wafers. The graphene oxide diodes give a better barrier height enhancement as compared with the conventional diodes. The value of homogeneous barrier height for Al/GO/p-Si MIS junctions was extracted as 0.74 eV. The diodes were also investigated under 300 watt light illumination for photovoltaic applications. Additionally, interfacial properties of the MIS diode with GO interlayer were determined. It has been seen that the capacitance of the device changes as a function of gate voltage and signal frequency from the capacitance-frequency measurements. It has also been reported that the interfacial trap charges reduce the capacitance with increasing frequency values.en_US
dc.description.sponsorshipThis study is supported by Republic of Turkey-Prime Ministry State Planning organization (DPT) (Project Number: 2010K120610, Batman University Central Research Laboratory).en_US
dc.identifier.citationGüllü, Ö., Çankaya, M.(2018). Morphological, structural and optical characteristics of graphene oxide layers and metal/interlayer/semiconductor photovoltaic diode application. Journal of Ovonic Research, 14(2), pp. 129-144.en_US
dc.identifier.endpage144en_US
dc.identifier.issn1584-9953
dc.identifier.issn1842-2403
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage129en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2205
dc.identifier.volume14en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherNational Institute of Research and Development for Optoelectronicsen_US
dc.relation.journalJournal of Ovonic Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectBand Gapen_US
dc.subjectGraphene Oxideen_US
dc.subjectMIS Diodeen_US
dc.subjectSchottky Barrieren_US
dc.subjectThin Filmsen_US
dc.titleMorphological, structural and optical characteristics of graphene oxide layers and metal/interlayer/semiconductor photovoltaic diode applicationen_US
dc.typeArticleen_US

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