Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device
Yükleniyor...
Dosyalar
Tarih
2010-03
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/restrictedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had a good rectifying behavior. By using the forward bias I–V characteristics, the values of ideality factor (n) and barrier height (Φb) for the Al/CR/p-Si MIS device were obtained as 1.68 and 0.77 eV, respectively. It was seen that the Φb value of 0.77 eV calculated for the Al/CR/p-Si MIS device was significantly higher than value of 0.50 eV of the conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of the Al/p-Si diode was achieved by using a thin interlayer of the CR organic material. This was attributed to the fact that the CR organic interlayer increased the effective barrier height by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24×1013 to 2.44×1012 eV−1 cm−2.
Açıklama
Anahtar Kelimeler
A. Electronic Materials, A. Interfaces, A. Organic Compounds, A. Semiconductors, D. Electrical Properties
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
71
Sayı
3
Künye
Güllü, Ö., Turut, A., Kılıçoğlu, T. (2010). Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device. Journal of Physics and Chemistry of Solids, 71(5). pp.351-356. https://doi.org/10.1016/j.jpcs.2009.12.089
