Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorKılıçoğlu, Tahsin
dc.date.accessioned2021-04-14T09:57:36Z
dc.date.available2021-04-14T09:57:36Z
dc.date.issued2010-03en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had a good rectifying behavior. By using the forward bias I–V characteristics, the values of ideality factor (n) and barrier height (Φb) for the Al/CR/p-Si MIS device were obtained as 1.68 and 0.77 eV, respectively. It was seen that the Φb value of 0.77 eV calculated for the Al/CR/p-Si MIS device was significantly higher than value of 0.50 eV of the conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of the Al/p-Si diode was achieved by using a thin interlayer of the CR organic material. This was attributed to the fact that the CR organic interlayer increased the effective barrier height by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24×1013 to 2.44×1012 eV−1 cm−2.en_US
dc.identifier.citationGüllü, Ö., Turut, A., Kılıçoğlu, T. (2010). Electronic properties of the metal organic interlayer inorganic semiconductor sandwich device. Journal of Physics and Chemistry of Solids, 71(5). pp.351-356. https://doi.org/10.1016/j.jpcs.2009.12.089en_US
dc.identifier.endpage356en_US
dc.identifier.issn00223697
dc.identifier.issue3en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage351en_US
dc.identifier.urihttps://doi.org/10.1016/j.jpcs.2009.12.089
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2877
dc.identifier.volume71en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.jpcs.2009.12.089en_US
dc.relation.journalJournal of Physics and Chemistry of Solidsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectA. Electronic Materialsen_US
dc.subjectA. Interfacesen_US
dc.subjectA. Organic Compoundsen_US
dc.subjectA. Semiconductorsen_US
dc.subjectD. Electrical Propertiesen_US
dc.titleElectronic properties of the metal organic interlayer inorganic semiconductor sandwich deviceen_US
dc.typeArticleen_US

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