Analysis of the series resistance and interface state densities in metal semiconductor structures
Yükleniyor...
Tarih
2009-03
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Journal of Physics: Conference Series
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
The electrical properties of Co/n-Si metal-semiconductor (MS) Schottky
structure investigated at room temperature using current-voltage (I-V) characteristics.
The characteristic parameters of the structure such as barrier height, ideality factor and
series resistance have been determined from the I-V measurements. The values of
barrier height obtained from Norde’s function were compared with those from Cheung
functions, and it was seen that there was a good agreement between barrier heights
from both methods. The series resistance values calculated with Cheung’s two
methods were compared and seen that there was an agreement with each other.
However, the values of series resistance obtained from Cheung functions and Norde’s
functions are not agreeing with each other. Because, Cheung functions are only
applied to the non-linear region (high voltage region) of the forward bias I–V
characteristics. Furthermore, the energy distribution of interface state density was
determined from the forward bias I-V characteristics by taking into account the bias
dependence of the effective barrier height. The results show that the presence of thin
interfacial layer between the metal and semiconductor
Açıklama
Anahtar Kelimeler
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
153
Sayı
Künye
Güllü, Ö., Karataş, Ş., Güler, G., Bakkaloğlu, Ö.F. (2009). Analysis of the series resistance and interface state densities in metal semiconductor structures. Journal of Physics: Conference Series, 153. doi:10.1088/1742-6596/153/1/012054
