Analysis of the series resistance and interface state densities in metal semiconductor structures

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorKarataş, Şükrü
dc.contributor.authorGüler, Gülşen
dc.contributor.authorBakkaloğlu, Ömer Faruk
dc.date.accessioned2021-04-15T08:36:44Z
dc.date.available2021-04-15T08:36:44Z
dc.date.issued2009-03en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe electrical properties of Co/n-Si metal-semiconductor (MS) Schottky structure investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the I-V measurements. The values of barrier height obtained from Norde’s function were compared with those from Cheung functions, and it was seen that there was a good agreement between barrier heights from both methods. The series resistance values calculated with Cheung’s two methods were compared and seen that there was an agreement with each other. However, the values of series resistance obtained from Cheung functions and Norde’s functions are not agreeing with each other. Because, Cheung functions are only applied to the non-linear region (high voltage region) of the forward bias I–V characteristics. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show that the presence of thin interfacial layer between the metal and semiconductoren_US
dc.identifier.citationGüllü, Ö., Karataş, Ş., Güler, G., Bakkaloğlu, Ö.F. (2009). Analysis of the series resistance and interface state densities in metal semiconductor structures. Journal of Physics: Conference Series, 153. doi:10.1088/1742-6596/153/1/012054en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.uri10.1088/1742-6596/153/1/012054
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2891
dc.identifier.volume153en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherJournal of Physics: Conference Seriesen_US
dc.relation.isversionof10.1088/1742-6596/153/1/012054en_US
dc.relation.journalJournal of Physics: Conference Seriesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.titleAnalysis of the series resistance and interface state densities in metal semiconductor structuresen_US
dc.typeArticleen_US

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