Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
Yükleniyor...
Tarih
2012-01
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.
Açıklama
Anahtar Kelimeler
Devices, Organics, Schottky Barriers, Surfaces and Interfaces
Kaynak
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
520
Sayı
6
Künye
Güllü, Ö, Aydoğan, Ş, Türüt, A. (2012). Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer. Thin Solid Films, 520(6), 1944-1948. https://doi.org/10.1016/j.tsf.2011.09.043
