Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorAydoğan, Şakir
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2019-07-05T12:42:19Z
dc.date.available2019-07-05T12:42:19Z
dc.date.issued2012-01en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.en_US
dc.identifier.citationGüllü, Ö, Aydoğan, Ş, Türüt, A. (2012). Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer. Thin Solid Films, 520(6), 1944-1948. https://doi.org/10.1016/j.tsf.2011.09.043en_US
dc.identifier.endpage1948en_US
dc.identifier.issn0040-6090
dc.identifier.issue6en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1944en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2011.09.043
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2216
dc.identifier.volume520en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.tsf.2011.09.043en_US
dc.relation.journalThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectDevicesen_US
dc.subjectOrganicsen_US
dc.subjectSchottky Barriersen_US
dc.subjectSurfaces and Interfacesen_US
dc.titleElectronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayeren_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
1-s2.0-S0040609011016919-main.pdf
Boyut:
829.74 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu