Silicon MIS diodes with Cr2O3 nanofilm Optical morphological structural and electronic transport properties

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorErdoğan, İbrahim Yasin
dc.date.accessioned2021-04-14T10:12:40Z
dc.date.available2021-04-14T10:12:40Z
dc.date.issued2010-04-15en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this work we report the optical, morphological and structural characterization and diode application of Cr2O3 nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet–visible (UV–vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr2O3 nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr2O3 on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV–vis absorption measurements indicate that the band gap of the Cr2O3 film is 3.08 eV. The PL measurement shows that the Cr2O3 nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr2O3/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current–voltage and capacitance–voltage. Ideality factor and barrier height for Au//Cr2O3/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 × 1013 eV−1 cm−2 to 8.45 × 1012 eV−1 cm−2.en_US
dc.identifier.citationGüllü, Ö., Erdoğan, İ.Y (2010). Silicon MIS diodes with Cr2O3 nanofilm Optical morphological structural and electronic transport properties. Applied Surface Science, 256(13). pp. 4185-4191. https://doi.org/10.1016/j.apsusc.2010.01.122en_US
dc.identifier.endpage4191en_US
dc.identifier.issn01694332
dc.identifier.issue13en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage4185en_US
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2010.01.122
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2878
dc.identifier.volume256en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.apsusc.2010.01.122en_US
dc.relation.journalApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectMIS Diodeen_US
dc.subjectNanofilmsen_US
dc.subjectCr2O3en_US
dc.subjectMetal Oxidesen_US
dc.subjectSchottky Barrieren_US
dc.subjectBand Gapen_US
dc.titleSilicon MIS diodes with Cr2O3 nanofilm Optical morphological structural and electronic transport propertiesen_US
dc.typeArticleen_US

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