Some electrical parameters of the Sn/p-Si diode under γ-irradiation
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Tarih
2017
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Çukurova Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The radiation response of metal-semiconductor (MS) contacts has been found to alter significantly
when the structures are exposed to pre-irradiation processes at determined doses. Radiation doses
greater than a kilogray exposure may cause strong changes on the electrical characteristics of MS
structures. It has been also shown that the particle or gamma irradiations induce defects in the band
gap which affects the free carrier concentration and leads to an increase and decrease of barrier height
in p-type and n-type semiconductors, respectively. The knowledge of the influence of radiation
damage on the Schottky barrier diodes (SBDs) performance is a fundamental field of research, having
technological relevance for many applications in the semiconductor electronic devices. Hence, it is
very much essential to evaluate the effect of irradiation and identify the degradation mechanism to
understand the failure mechanisms.
In this work, we have investigated the electrical parameters of the Sn/p-Si Schottky barrier diodes by
using I-V and C-V characteristics under γ-irradiation at room temperature. The basic diode
parameters such as ideality factor, barrier height, series resistance and reverse saturation current were
extracted from electrical measurements as a function of the irradiation dose. The results indicated that
γ-irradiation induced an increase in the effective Schottky barrier height extracted from both I-V and
C-V measurements. Also, it was seen that ideality factor increased with the increasing γ-irradiation
doses. We have also observed that the reverse bias current of the Sn/Si contact exceedingly decreased
with increasing irradiation dose with low energy (60 keV). The basic results as related to the gamma
irradiation have been indicated that this device may have applications as radiation sensors in order to
detect the low energy gamma radiation.
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Künye
Pakma, O., Güllü, Ö. (2017). Some electrical parameters of the Sn/p-Si diode under γ-irradiation. 3rd International Conference on Theoretical and Experimental Studies in Nuclear Applications and Technology, 10-12 May 2017, Adana.
