Some electrical parameters of the Sn/p-Si diode under γ-irradiation

Basit Öğe Kaydı
dc.authorid0000-0002-3098-0973en_US
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorPakma, Osman
dc.contributor.authorGüllü, Ömer
dc.date.accessioned2021-04-15T11:51:37Z
dc.date.available2021-04-15T11:51:37Z
dc.date.issued2017en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe radiation response of metal-semiconductor (MS) contacts has been found to alter significantly when the structures are exposed to pre-irradiation processes at determined doses. Radiation doses greater than a kilogray exposure may cause strong changes on the electrical characteristics of MS structures. It has been also shown that the particle or gamma irradiations induce defects in the band gap which affects the free carrier concentration and leads to an increase and decrease of barrier height in p-type and n-type semiconductors, respectively. The knowledge of the influence of radiation damage on the Schottky barrier diodes (SBDs) performance is a fundamental field of research, having technological relevance for many applications in the semiconductor electronic devices. Hence, it is very much essential to evaluate the effect of irradiation and identify the degradation mechanism to understand the failure mechanisms. In this work, we have investigated the electrical parameters of the Sn/p-Si Schottky barrier diodes by using I-V and C-V characteristics under γ-irradiation at room temperature. The basic diode parameters such as ideality factor, barrier height, series resistance and reverse saturation current were extracted from electrical measurements as a function of the irradiation dose. The results indicated that γ-irradiation induced an increase in the effective Schottky barrier height extracted from both I-V and C-V measurements. Also, it was seen that ideality factor increased with the increasing γ-irradiation doses. We have also observed that the reverse bias current of the Sn/Si contact exceedingly decreased with increasing irradiation dose with low energy (60 keV). The basic results as related to the gamma irradiation have been indicated that this device may have applications as radiation sensors in order to detect the low energy gamma radiation.en_US
dc.identifier.citationPakma, O., Güllü, Ö. (2017). Some electrical parameters of the Sn/p-Si diode under γ-irradiation. 3rd International Conference on Theoretical and Experimental Studies in Nuclear Applications and Technology, 10-12 May 2017, Adana.en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2903
dc.language.isoenen_US
dc.publisherÇukurova Üniversitesien_US
dc.relation.journal3rd International Conference on Theoretical and Experimental Studies in Nuclear Applications and Technology, 10-12 May 2017en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleSome electrical parameters of the Sn/p-Si diode under γ-irradiationen_US
dc.typeConference Objecten_US

Dosyalar

Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Fen - Edebiyat Fakültesi, Fizik Bölümü, Bildiri Metinleri Koleksiyonu