Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms
Yükleniyor...
Dosyalar
Tarih
2010-04
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/restrictedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
Here I demonstrate that DNA biopolymer molecules can control the electrical characteristics of conventional Al/n-InP metal–semiconductor contacts. Results show that DNA increases an effective barrier height as high as 0.87 eV by influencing the space charge region of n-InP device with a good rectifying behavior
Açıklama
Anahtar Kelimeler
DNA, Biopolymer, Schottky Barrier, Ideality Factor, InP
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
87
Sayı
4
Künye
Güllü, Ö. (2010). Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms. Microelectronic Engineering. 87(4). pp.648-651. https://doi.org/10.1016/j.mee.2009.09.001
