Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.date.accessioned2021-04-14T10:58:07Z
dc.date.available2021-04-14T10:58:07Z
dc.date.issued2010-04en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractHere I demonstrate that DNA biopolymer molecules can control the electrical characteristics of conventional Al/n-InP metal–semiconductor contacts. Results show that DNA increases an effective barrier height as high as 0.87 eV by influencing the space charge region of n-InP device with a good rectifying behavioren_US
dc.identifier.citationGüllü, Ö. (2010). Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms. Microelectronic Engineering. 87(4). pp.648-651. https://doi.org/10.1016/j.mee.2009.09.001en_US
dc.identifier.endpage651en_US
dc.identifier.issn01679317
dc.identifier.issue4en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage648en_US
dc.identifier.urihttps://doi.org/10.1016/j.mee.2009.09.001
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2881
dc.identifier.volume87en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.mee.2009.09.001en_US
dc.relation.journalMicroelectronic Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectDNAen_US
dc.subjectBiopolymeren_US
dc.subjectSchottky Barrieren_US
dc.subjectIdeality Factoren_US
dc.subjectInPen_US
dc.titleUltrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilmsen_US
dc.typeArticleen_US

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