High barrier Schottky diode with organic interlayer
Yükleniyor...
Tarih
2012-03
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
A new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good currentvoltage (IV) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitancevoltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the IV measurement of the diode under illumination, short circuit current (I sc) and open circuit voltage (V oc) have been extracted as 0.33 μA and 150 mV, respectively.
Açıklama
Anahtar Kelimeler
Organic Film, Schottky Barrier, Ideality Factor
Kaynak
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
152
Sayı
5
Künye
Güllü, Ö, Aydoğan, Ş, Türüt, A. (2012). High barrier Schottky diode with organic interlayer. Solid State Communications, 152(5), pp. 381-385. https://doi.org/10.1016/j.ssc.2011.12.007