High barrier Schottky diode with organic interlayer

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorAydoğan, Şakir
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2019-07-05T10:50:46Z
dc.date.available2019-07-05T10:50:46Z
dc.date.issued2012-03en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractA new Cu/n-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/n-InP Schottky diodes, which have good currentvoltage (IV) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n-InP. By using capacitancevoltage measurement of the Cu/PSP/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the IV measurement of the diode under illumination, short circuit current (I sc) and open circuit voltage (V oc) have been extracted as 0.33 μA and 150 mV, respectively.en_US
dc.identifier.citationGüllü, Ö, Aydoğan, Ş, Türüt, A. (2012). High barrier Schottky diode with organic interlayer. Solid State Communications, 152(5), pp. 381-385. https://doi.org/10.1016/j.ssc.2011.12.007en_US
dc.identifier.endpage385en_US
dc.identifier.issn0038-1098
dc.identifier.issue5en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage381en_US
dc.identifier.urihttps://doi.org/10.1016/j.ssc.2011.12.007
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2214
dc.identifier.volume152en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.ssc.2011.12.007en_US
dc.relation.journalSolid State Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectOrganic Filmen_US
dc.subjectSchottky Barrieren_US
dc.subjectIdeality Factoren_US
dc.titleHigh barrier Schottky diode with organic interlayeren_US
dc.typeArticleen_US

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