The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
Yükleniyor...
Tarih
2010-03-04
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220 K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald.
Açıklama
Anahtar Kelimeler
Barrier Height, Heterojunction Diode, I-V Characteristics, Ideality Factor, MEH-PPV, Schottky Diodes, Series Resistance
Kaynak
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
492
Sayı
1/2
Künye
Kavasoğlu, A. S., Yakuphanoğlu, F., Kavasoğlu, N., Pakma, O., Birgi, Ö., Oktik, Ş. (2010). The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics. Journal of Alloys and Compounds, 492 (1/2), pp. 421-426. https://doi.org/10.1016/j.jallcom.2009.11.128
