The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics

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dc.authorid0000-0001-6758-5574en_US
dc.authorid0000-0001-7249-2700en_US
dc.authorid0000-0002-3098-0973en_US
dc.contributor.authorKavasoğlu, Abdülkadir Sertap
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorKavasoğlu, Neşe
dc.contributor.authorPakma, Osman
dc.contributor.authorBirgi, Özcan
dc.contributor.authorOktik, Şener
dc.date.accessioned2021-04-15T08:33:59Z
dc.date.available2021-04-15T08:33:59Z
dc.date.issued2010-03-04en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220 K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald.en_US
dc.identifier.citationKavasoğlu, A. S., Yakuphanoğlu, F., Kavasoğlu, N., Pakma, O., Birgi, Ö., Oktik, Ş. (2010). The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics. Journal of Alloys and Compounds, 492 (1/2), pp. 421-426. https://doi.org/10.1016/j.jallcom.2009.11.128en_US
dc.identifier.endpage426en_US
dc.identifier.issn0925-8388
dc.identifier.issue1/2en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage421en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2009.11.128
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2890
dc.identifier.volume492en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.jallcom.2009.11.128en_US
dc.relation.journalJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectBarrier Heighten_US
dc.subjectHeterojunction Diodeen_US
dc.subjectI-V Characteristicsen_US
dc.subjectIdeality Factoren_US
dc.subjectMEH-PPVen_US
dc.subjectSchottky Diodesen_US
dc.subjectSeries Resistanceen_US
dc.titleThe analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristicsen_US
dc.typeArticleen_US

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