Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer
Yükleniyor...
Tarih
2015-09-01
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Walter de Gruyter
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-ShareAlike 3.0 United States
Attribution-ShareAlike 3.0 United States
Özet
In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n-InP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.
Açıklama
Anahtar Kelimeler
Electrical Properties, Interfaces, Schottky Diodes, Semiconductors
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
33
Sayı
3
Künye
Güllü, Ö, Türüt, A. (2015). Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer. Materials Science-Poland, 33(3), pp. 593-600. https://doi.org/10.1515/msp-2015-0089
