Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer
dc.authorid | 0000-0002-3785-6190 | en_US |
dc.contributor.author | Güllü, Ömer | |
dc.contributor.author | Türüt, Abdülmecit | |
dc.date.accessioned | 2019-07-05T10:20:55Z | |
dc.date.available | 2019-07-05T10:20:55Z | |
dc.date.issued | 2015-09-01 | en_US |
dc.department | Batman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümü | en_US |
dc.description.abstract | In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n-InP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP. | en_US |
dc.identifier.citation | Güllü, Ö, Türüt, A. (2015). Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer. Materials Science-Poland, 33(3), pp. 593-600. https://doi.org/10.1515/msp-2015-0089 | en_US |
dc.identifier.endpage | 600 | en_US |
dc.identifier.issn | https://doi.org/10.1515/msp-2015-0089 | |
dc.identifier.issn | 2083-1331 | |
dc.identifier.issn | 2083-134X | |
dc.identifier.issue | 3 | en_US |
dc.identifier.scopusquality | N/A | en_US |
dc.identifier.startpage | 593 | en_US |
dc.identifier.uri | https://hdl.handle.net/20.500.12402/2211 | |
dc.identifier.volume | 33 | en_US |
dc.identifier.wosquality | N/A | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Walter de Gruyter | en_US |
dc.relation.isversionof | 10.1515/msp-2015-0089 | en_US |
dc.relation.journal | Materials Science-Poland | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.rights | Attribution-ShareAlike 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-sa/3.0/us/ | * |
dc.subject | Electrical Properties | en_US |
dc.subject | Interfaces | en_US |
dc.subject | Schottky Diodes | en_US |
dc.subject | Semiconductors | en_US |
dc.title | Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer | en_US |
dc.type | Article | en_US |
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