Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2019-07-05T10:20:55Z
dc.date.available2019-07-05T10:20:55Z
dc.date.issued2015-09-01en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n-InP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.en_US
dc.identifier.citationGüllü, Ö, Türüt, A. (2015). Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer. Materials Science-Poland, 33(3), pp. 593-600. https://doi.org/10.1515/msp-2015-0089en_US
dc.identifier.endpage600en_US
dc.identifier.issnhttps://doi.org/10.1515/msp-2015-0089
dc.identifier.issn2083-1331
dc.identifier.issn2083-134X
dc.identifier.issue3en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage593en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2211
dc.identifier.volume33en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWalter de Gruyteren_US
dc.relation.isversionof10.1515/msp-2015-0089en_US
dc.relation.journalMaterials Science-Polanden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-sa/3.0/us/*
dc.subjectElectrical Propertiesen_US
dc.subjectInterfacesen_US
dc.subjectSchottky Diodesen_US
dc.subjectSemiconductorsen_US
dc.titleElectronic parameters of MIS Schottky diodes with DNA biopolymer interlayeren_US
dc.typeArticleen_US

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