Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction
Yükleniyor...
Tarih
2011-06
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380 K with 20 K intervals. The short current density (Jsc) and open circuit voltage (Voc) parameters have been determined between 40 and 100 mW/cm2. The photovoltaic parameters of the device have been also determined under 100 mW/cm2 and AM1.5 illumination condition.
Açıklama
Anahtar Kelimeler
Heterojunction, Indium Phosphate, Solar Cell, Sputtering, Zinc Oxide
Kaynak
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
509
Sayı
23
Künye
Ocak, Y. S., Kulakçı, M., Turan, R., Kılıçoğlu, T., Güllü, Ö. (2011). Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction. Journal of Alloys and Compounds, 509(23), pp. 6631-6634. https://doi.org/10.1016/j.jallcom.2011.03.114
