Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

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dc.authorid0000-0001-8754-1720en_US
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorKulakçı, Mustafa
dc.contributor.authorTuran, Raşit
dc.contributor.authorKılıçoğlu, Tahsin
dc.contributor.authorGüllü, Ömer
dc.date.accessioned2019-07-05T12:52:30Z
dc.date.available2019-07-05T12:52:30Z
dc.date.issued2011-06en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractA ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380 K with 20 K intervals. The short current density (Jsc) and open circuit voltage (Voc) parameters have been determined between 40 and 100 mW/cm2. The photovoltaic parameters of the device have been also determined under 100 mW/cm2 and AM1.5 illumination condition.en_US
dc.identifier.citationOcak, Y. S., Kulakçı, M., Turan, R., Kılıçoğlu, T., Güllü, Ö. (2011). Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction. Journal of Alloys and Compounds, 509(23), pp. 6631-6634. https://doi.org/10.1016/j.jallcom.2011.03.114en_US
dc.identifier.endpage6634en_US
dc.identifier.issn0925-8388
dc.identifier.issue23en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage6631en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2011.03.114
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2217
dc.identifier.volume509en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.jallcom.2011.03.114en_US
dc.relation.journalJournal of Alloys and Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectHeterojunctionen_US
dc.subjectIndium Phosphateen_US
dc.subjectSolar Cellen_US
dc.subjectSputteringen_US
dc.subjectZinc Oxideen_US
dc.titleAnalysis of electrical and photoelectrical properties of ZnO/p-InP heterojunctionen_US
dc.typeArticleen_US

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