Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices
Küçük Resim Yok
Tarih
2018-05-02
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
The European Physical Journal Applied Physics
Erişim Hakkı
info:eu-repo/semantics/restrictedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.
Açıklama
Anahtar Kelimeler
Kaynak
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
82
Sayı
2
Künye
Güllü, Ö., Pakma, O., Özden, Ş. (2018). Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices. The European Physical Journal Applied Physics, 82(2). pp.5. https://dx.doi.org/10.1051/epjap/2018180004
