Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices

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dc.authorid0000-0002-3785-6190en_US
dc.authorid0000-0002-3098-0973en_US
dc.authorid0000-0003-0716-9194en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorPakma, Osman
dc.contributor.authorÖzden, Şadan
dc.date.accessioned2021-04-14T05:42:22Z
dc.date.available2021-04-14T05:42:22Z
dc.date.issued2018-05-02en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.en_US
dc.identifier.citationGüllü, Ö., Pakma, O., Özden, Ş. (2018). Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices. The European Physical Journal Applied Physics, 82(2). pp.5. https://dx.doi.org/10.1051/epjap/2018180004en_US
dc.identifier.issn1286-0042
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage5en_US
dc.identifier.urihttps://dx.doi.org/10.1051/epjap/2018180004
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2863
dc.identifier.volume82en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherThe European Physical Journal Applied Physicsen_US
dc.relation.isversionof10.1051/epjap/2018180004en_US
dc.relation.journalThe European Physical Journal Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.titleRoom temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devicesen_US
dc.typeArticleen_US

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Fen - Edebiyat Fakültesi, Fizik Bölümü, Makale Koleksiyonu
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