Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
Yükleniyor...
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Scientific Publishers
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Attribution-ShareAlike 3.0 United States
Attribution-ShareAlike 3.0 United States
Özet
In the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are
investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier enhancement.
Interfacial properties of the MIS diode with GO interlayer are extracted from current–voltage (I–V) measurement. The
simple diode parameters such as barrier height and ideality factor are extracted from I–V plots, and the values are compared
with those of conventional Al/n-InP MS contact. The value of barrier height (BH) for the Al/GO/n-InP contact is found as
0.85 eV. The BH value of 0.85 eV of the Al/GO/n-InP MIS structure is as high as around 100% compared to the value of
0.43 eV of the Al/n-InP reference contacts. We have showed that the value of 0.85 eV is one of the highest values
presented for reference contacts with an interlayer.
Açıklama
Anahtar Kelimeler
Graphene Oxide, Thin Films, Band Gap, MIS Diode, X-ray Diffraction
Kaynak
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
93
Sayı
4
Künye
Güllü, Ö., Çankaya, M., Rajagopal Reddy, V. (2019). Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer. Indian Journal of Physics, 93 (4), pp. 467-474. https://doi.org/10.1007/s12648-018-1311-4
