Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer

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dc.authorid0000-0002-3785-6190en_US
dc.authorid0000-0001-7432-548Xen_US
dc.authorid0000-0002-0327-8425en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorÇankaya, Murat
dc.contributor.authorRajagopal Reddy, Varra
dc.date.accessioned2019-06-17T13:14:27Z
dc.date.available2019-06-17T13:14:27Z
dc.date.issued2019en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractIn the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier enhancement. Interfacial properties of the MIS diode with GO interlayer are extracted from current–voltage (I–V) measurement. The simple diode parameters such as barrier height and ideality factor are extracted from I–V plots, and the values are compared with those of conventional Al/n-InP MS contact. The value of barrier height (BH) for the Al/GO/n-InP contact is found as 0.85 eV. The BH value of 0.85 eV of the Al/GO/n-InP MIS structure is as high as around 100% compared to the value of 0.43 eV of the Al/n-InP reference contacts. We have showed that the value of 0.85 eV is one of the highest values presented for reference contacts with an interlayer.en_US
dc.identifier.citationGüllü, Ö., Çankaya, M., Rajagopal Reddy, V. (2019). Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer. Indian Journal of Physics, 93 (4), pp. 467-474. https://doi.org/10.1007/s12648-018-1311-4en_US
dc.identifier.endpage474en_US
dc.identifier.issn0973-1458
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage467en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2046
dc.identifier.urihttps://doi.org/10.1007/s12648-018-1311-4
dc.identifier.volume93en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherScientific Publishersen_US
dc.relation.isversionof10.1007/s12648-018-1311-4en_US
dc.relation.journalIndian Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.rightsAttribution-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-sa/3.0/us/*
dc.subjectGraphene Oxideen_US
dc.subjectThin Filmsen_US
dc.subjectBand Gapen_US
dc.subjectMIS Diodeen_US
dc.subjectX-ray Diffractionen_US
dc.titleBarrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layeren_US
dc.typeArticleen_US

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