Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
Yükleniyor...
Dosyalar
Tarih
2010-03
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
The current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. The ideality factor and the barrier height from the I–V characteristics have been determined as 3.14 and 0.80 eV, respectively. A modified Norde's function combined with the conventional I–V method has been used to extract the parameters including the barrier height and the series resistance. The barrier height and the series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there was a good agreement between those from both method. It has also been seen that the values of diode capacitance increased up to the constant values for the forward bias.
Açıklama
Anahtar Kelimeler
Schottky Diode, Organic Semiconductor, Ideality Factor, Series Resistance
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
42
Sayı
5
Künye
Güllü, Ö., Asubay, S., Turut, A., Aydoğan, Ş. (2010). Electrical characterization of the Al/new fuchsin/n-Si organic-modified device. Physica E: Low-dimensional Systems and Nanostructures. 42(5), pp.1411-1416. https://doi.org/10.1016/j.physe.2009.11.079
