Electrical characterization of the Al/new fuchsin/n-Si organic-modified device

Basit Öğe Kaydı
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorAsubay, Sezai
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorAydoğan, Şakir
dc.date.accessioned2021-04-14T08:52:18Z
dc.date.available2021-04-14T08:52:18Z
dc.date.issued2010-03en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractThe current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. The ideality factor and the barrier height from the I–V characteristics have been determined as 3.14 and 0.80 eV, respectively. A modified Norde's function combined with the conventional I–V method has been used to extract the parameters including the barrier height and the series resistance. The barrier height and the series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there was a good agreement between those from both method. It has also been seen that the values of diode capacitance increased up to the constant values for the forward bias.en_US
dc.identifier.citationGüllü, Ö., Asubay, S., Turut, A., Aydoğan, Ş. (2010). Electrical characterization of the Al/new fuchsin/n-Si organic-modified device. Physica E: Low-dimensional Systems and Nanostructures. 42(5), pp.1411-1416. https://doi.org/10.1016/j.physe.2009.11.079en_US
dc.identifier.endpage1416en_US
dc.identifier.issue5en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage1411en_US
dc.identifier.urihttps://doi.org/10.1016/j.physe.2009.11.079
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2872
dc.identifier.volume42en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.physe.2009.11.079en_US
dc.relation.journalPhysica E: Low-dimensional Systems and Nanostructuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectSchottky Diodeen_US
dc.subjectOrganic Semiconductoren_US
dc.subjectIdeality Factoren_US
dc.subjectSeries Resistanceen_US
dc.titleElectrical characterization of the Al/new fuchsin/n-Si organic-modified deviceen_US
dc.typeArticleen_US

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