A novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diode
Yükleniyor...
Dosyalar
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Jomard Publishing
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
. A new Schottky barrier diode of Al/Coronene/n-GaAs/In was successfully prepared using spincoating method. The interface state and electrical properties of Al/Coronene/n-GaAs Schottky barrier
diode have been studied by current– voltage (I–V) data in dark and light. The key diode parameters such
as ideality factor, Schottky barrier height, rectification ratio, series and shunt resistances were evaluated
from I–V data. The effective forward conduction mechanisms were determined as the thermionic
emission at low voltage. Results obtained at room temperature (300 K) showed highly rectifying devices
under dark and light. The barrier height (
B
) of the diode was obtained as 0.901 eV and 0.842 eV under
dark and light, respectively. The ideality factor (n) of the diode was calculated to be 1.49 and 1.82 under
dark and light, respectively. The values of series resistance
( ) Rs
obtained from Cheung-Cheung
technique were determined to be 18
and 16
under dark and light, respectively. The interface states
density (Nss) of the Shottky device exhibits an exponential decrease with bias from 5.31x1010 eV-1
cm-2
and 7.24x1010 eV-1
cm-2
at (Ec-0.338) eV to 1.84x1010 eV-1
cm-2
and 2.17x1010 eV-1
cm-2
at (Ec-0.640) eV
under dark and light, respectively.
Açıklama
Anahtar Kelimeler
Coronene, Schottky Diode, Barrier Height, Ideality Factor, Series Resistance
Kaynak
WoS Q Değeri
Scopus Q Değeri
Cilt
3
Sayı
1
Künye
Akın, Ü., Yüksel, Ö. F., Pakma, O., Koralay, H., Çavdar, Ş., Tuğluoğlu, N. (2019). A novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diode. New Materials, Compounds and Applications, 3 (1), pp. 15-22.
