A novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diode

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dc.authorid0000-0001-8093-2331en_US
dc.authorid0000-0001-8093-2331en_US
dc.authorid0000-0001-7893-344Xen_US
dc.authorid0000-0001-6079-7048en_US
dc.authorid0000-0001-9428-4347en_US
dc.contributor.authorAkın, Ümmühan
dc.contributor.authorYüksel, Ömer Faruk
dc.contributor.authorPakma, Osman
dc.contributor.authorKoralay, Haluk
dc.contributor.authorÇavdar, Şükrü
dc.contributor.authorTuğluoğlu, Nihat
dc.date.accessioned2021-04-14T08:39:07Z
dc.date.available2021-04-14T08:39:07Z
dc.date.issued2019en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstract. A new Schottky barrier diode of Al/Coronene/n-GaAs/In was successfully prepared using spincoating method. The interface state and electrical properties of Al/Coronene/n-GaAs Schottky barrier diode have been studied by current– voltage (I–V) data in dark and light. The key diode parameters such as ideality factor, Schottky barrier height, rectification ratio, series and shunt resistances were evaluated from I–V data. The effective forward conduction mechanisms were determined as the thermionic emission at low voltage. Results obtained at room temperature (300 K) showed highly rectifying devices under dark and light. The barrier height ( B ) of the diode was obtained as 0.901 eV and 0.842 eV under dark and light, respectively. The ideality factor (n) of the diode was calculated to be 1.49 and 1.82 under dark and light, respectively. The values of series resistance ( ) Rs obtained from Cheung-Cheung technique were determined to be 18  and 16  under dark and light, respectively. The interface states density (Nss) of the Shottky device exhibits an exponential decrease with bias from 5.31x1010 eV-1 cm-2 and 7.24x1010 eV-1 cm-2 at (Ec-0.338) eV to 1.84x1010 eV-1 cm-2 and 2.17x1010 eV-1 cm-2 at (Ec-0.640) eV under dark and light, respectively.en_US
dc.identifier.citationAkın, Ü., Yüksel, Ö. F., Pakma, O., Koralay, H., Çavdar, Ş., Tuğluoğlu, N. (2019). A novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diode. New Materials, Compounds and Applications, 3 (1), pp. 15-22.en_US
dc.identifier.endpage22en_US
dc.identifier.issn2523-4773
dc.identifier.issn2521-7194
dc.identifier.issue1en_US
dc.identifier.startpage15en_US
dc.identifier.urihttp://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V3N1/AkinU%20et%20al.pdf
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2870
dc.identifier.volume3en_US
dc.language.isoenen_US
dc.publisherJomard Publishingen_US
dc.relation.journalNew Materials, Compounds and Applicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectCoroneneen_US
dc.subjectSchottky Diodeen_US
dc.subjectBarrier Heighten_US
dc.subjectIdeality Factoren_US
dc.subjectSeries Resistanceen_US
dc.titleA novel device behavior of al/coronene/n-gaas/in organicbased schottky barrier diodeen_US
dc.typeArticleen_US

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