A study of the rectifying behaviour of aniline green-based Schottky diode
Yükleniyor...
Tarih
2010-02
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/restrictedAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
An Al/aniline green (AG)/Ga2Te3 device was fabricated and the current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the device have been investigated at room temperature. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. It was seen that the forward bias current–voltage characteristics at sufficiently large voltages has shown the effect of the series resistance. In addition, it was seen from the C–f characteristics that the values of capacitance have been decreased towards to the high frequencies. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the Ga2Te3 that can follow the ac signal.
Açıklama
Anahtar Kelimeler
Schottky Barrier, Ideality Factor, Organic Semiconductor, Aniline Green
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
87
Sayı
2
Künye
Güllü, Ö., Aydoğan, Ş. (2010). A study of the rectifying behaviour of aniline green-based Schottky diode. Microelectronic Engineering. 87(2). pp.187-191. https://dx.doi.org/10.1016/j.mee.2009.07.007
