A study of the rectifying behaviour of aniline green-based Schottky diode

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dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorGüllü, Ömer
dc.contributor.authorAydoğan, Şakir
dc.date.accessioned2021-04-14T10:27:54Z
dc.date.available2021-04-14T10:27:54Z
dc.date.issued2010-02en_US
dc.departmentBatman Üniversitesi Fen - Edebiyat Fakültesi Fizik Bölümüen_US
dc.description.abstractAn Al/aniline green (AG)/Ga2Te3 device was fabricated and the current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the device have been investigated at room temperature. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. It was seen that the forward bias current–voltage characteristics at sufficiently large voltages has shown the effect of the series resistance. In addition, it was seen from the C–f characteristics that the values of capacitance have been decreased towards to the high frequencies. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the Ga2Te3 that can follow the ac signal.en_US
dc.identifier.citationGüllü, Ö., Aydoğan, Ş. (2010). A study of the rectifying behaviour of aniline green-based Schottky diode. Microelectronic Engineering. 87(2). pp.187-191. https://dx.doi.org/10.1016/j.mee.2009.07.007en_US
dc.identifier.endpage191en_US
dc.identifier.issn01679317
dc.identifier.issue2en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage187en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.mee.2009.07.007
dc.identifier.urihttps://hdl.handle.net/20.500.12402/2879
dc.identifier.volume87en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.isversionof10.1016/j.mee.2009.07.007en_US
dc.relation.journalMicroelectronic Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectSchottky Barrieren_US
dc.subjectIdeality Factoren_US
dc.subjectOrganic Semiconductoren_US
dc.subjectAniline Greenen_US
dc.titleA study of the rectifying behaviour of aniline green-based Schottky diodeen_US
dc.typeArticleen_US

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