Interface effects of annealing temperatures in Al/HfO2/p-Si (MIS) structures
Yükleniyor...
Dosyalar
Tarih
2017-09-20
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Gazi Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-ShareAlike 3.0 United States
Attribution-NonCommercial-ShareAlike 3.0 United States
Özet
In this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures were investigated by taking into consideration the effect of the interfacial insulator layer and surface states (Nss) at room temperature. All of the structures showed non-ideal I-V behaviour with ideality factor (n) in the range between 2.35 and 4.42 owing to interfacial insulator layer and surface states. The values of Nss and barrier height (fb) for three samples were calculated. The values of n and Nss ascend with increasing the insulator layer thickness (δ) while the values of fb decreases.
Açıklama
Anahtar Kelimeler
High Dielectric Materials, Sol-Gel, MIS Devices
Kaynak
WoS Q Değeri
N/A
Scopus Q Değeri
Q3
Cilt
30
Sayı
3
Künye
Özden, Ş., Pakma, O. (2017). Interface effects of annealing temperatures in Al/HfO2/p-Si (MIS) structures. Gazi University Journal of Science, 30 (3), pp. 273-280.
