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Öğe Temperature dependent electrical transport in Al/Poly(4-vinyl phenol)/ p -GaAs metal-oxide-semiconductor by sol-gel spin coating method(Hindawi, 2016-03-10) Özden, Şadan; Tozlu, Cem; Pakma, OsmanDeposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80-320 K while the current-voltage (I-V) characteristics of the structure were examined in the study. Ideality factor (n) and barrier height (φ b) values found in the experiment ranged from 3.13 and 0.616 eV (320 K) to 11.56 and 0.147 eV (80 K). Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.Öğe Interface effects of annealing temperatures in Al/HfO2/p-Si (MIS) structures(Gazi Üniversitesi, 2017-09-20) Özden, Şadan; Pakma, OsmanIn this study, Al/HfO2/p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures were investigated by taking into consideration the effect of the interfacial insulator layer and surface states (Nss) at room temperature. All of the structures showed non-ideal I-V behaviour with ideality factor (n) in the range between 2.35 and 4.42 owing to interfacial insulator layer and surface states. The values of Nss and barrier height (fb) for three samples were calculated. The values of n and Nss ascend with increasing the insulator layer thickness (δ) while the values of fb decreases.
