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Öğe Electronic properties of the Al/Orange G/n-Si junction(2017-04) Güllü, Ömer; Arsel, İsmailÖğe I V and C V F characteristics of aniline green N type silicon diode(İstanbul University, 2015) Özkan, Samet; Güllü, Ömer; Arsel, İsmail; Özaydın, Cihat; Pakma, Osman; Turut, AbdülmecitWe have studied the I-V, C-V and C-f characteristics of the Aniline Green (AG)/n-type Si structure. In organic/inorganic semiconductor contact applications, in order to keep the technological difficulties and unknowns to a minimum, silicon is generally chosen as the substrate semiconducting material. In this structure, deposition of organic materials on the inorganic semiconductor can generate large number of interface states at the semiconductor surface that strongly influence the electrical properties of the AG/n-Si structure. The values of the ideality factor, series resistance and barrier height obtained from two methods were compared, and it was seen that there was an agreement with each other. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently large voltages is caused by the presence of the effect of series resistance. Thus, the concavity of the forward bias current-voltage characteristics increases with the increasing series resistance value. The high resistance values have given the high ideality factors. Also, the higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the nSi that can follow the ac signal.Öğe Electrical parameters of safranine T N silicon contacts(İstanbul University, 2015) Güllü, Ömer; Arsel, İsmail; Özkan, Samet; Özaydın, Cihat; Pakma, Osman; Turut, AbdülmecitIn this work, it has been investigated current-voltage (I-V) andcapacitance-voltage-frequency (C-V-f) characteristics of the Al/SafranineT(ST)/n-Si structure. The values of the ideality factor, series resistance and barrier height calculated by using different methods were compared. It was seen that there was an agreement with each other. Also, it was seen that the barrier height value for our device was higher than one value of 0.50 eV of conventional Al/n-Si Schottky contact. The change in the barrier height value of the device was ascribed to ST thin layer modifying the effective barrier height by influencing the space charge region of the Si inorganic semiconductor. The downward concave curvature of the forward bias current-voltage characteristics at sufficiently large voltages have been attributed to the effect of series resistance. Thus, the concavity of the forward bias current-voltage characteristics increases with increasing series resistance value. It has been seen that the values of capacitance are almost independent to a certain value of frequency, after this value, the capacitance decreases with increasing frequency. The higher values of capacitance at low frequencies have been attributed to the excess capacitance resulting from the interface states in equilibrium with the n-Silicon that could follow the alternating current signal.Öğe The Current voltage and Capacitance voltage frequency characteristics of the Al methyl violet n Si diode(Türk Fizik Derneği, 2016-09) Güllü, Ömer; Arsel, İsmailÖğe Current-capacitance-voltage characteristics of the Al/methyl red/n-InP diode(2017-04) Güllü, Ömer; Arsel, İsmailÖğe Statistical analysis of solar radiation models onto inclined planes for climatic conditions of Batman (Turkey)(İstanbul University, 2015) Derse, Mehmet Sait; Öztürker, Hakkı; Pakma, Nilay; Pakma, Osman; Güllü, Ömer; Arsel, İsmailSolar energy is one of the most widely used renewable energy resources in the world. A drawback, common to the photovoltaic systems (PV) is their unpredictable nature and their output cannot be accurately predicted, because, these systems are dependent on climatic conditions. Solar radiation data are the best source of information for proper design of PV systems. In this study; hourly tilted surface solar radiation is measured at different slope angles in Batman (Turkey). Selected models were compared on the basis of the statistical error tests; mean square errors (MSE), mean absolute errors (MAE) and root mean square errors (RMSE) and mean absolute percentage error (MAPE). Besides, a new equation was developed to calculate monthly average daily global solar radiation in Batman.
