Filtreler

2008 - 20102
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Ayarlar

Yazar: Asubay, Sezai × Scopus Q: N/A ×

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  • Küçük Resim
    Öğe
    Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
    (Elsevier, 2010-03) Güllü, Ömer; Asubay, Sezai; Turut, Abdulmecit; Aydoğan, Şakir
    The current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I–V characteristic of the device shows a good rectification. The ideality factor and the barrier height from the I–V characteristics have been determined as 3.14 and 0.80 eV, respectively. A modified Norde's function combined with the conventional I–V method has been used to extract the parameters including the barrier height and the series resistance. The barrier height and the series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there was a good agreement between those from both method. It has also been seen that the values of diode capacitance increased up to the constant values for the forward bias.
  • Küçük Resim
    Öğe
    Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
    (Elsevier, 2008-03-25) Güllü, Ömer; Turut, Abdulmecit; Asubay, Sezai
    We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 °C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current–voltage characteristics have varied from 0.58 to 0.72 eV, and ideality factor n from 1.14 to 1.47. The BH for the annealed SBDs from the current–voltage characteristics have varied from 0.76 to 0.82 eV, and ideality factor n from 1.17 to 1.39. As a result of the thermal annealing, it has been seen that the BH values of the annealed SBDs are larger than those of the as-deposited SBDs. We have determined a lateral homogeneous BH value of 0.72 eV for the as-deposited Au/p-InP SBD from the experimental linear relationship between barrier heights and ideality factors, and a value of 0.85 eV for the annealed Au/p-InP SBD. The increase of 0.13 eV in the BH value by means of 400 °C annealing has been ascribed to the formation of the excess charges that electrically actives on the semiconductor surface.