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Öğe Biodiesel production from inedible animal tallow and an experimental investigation of its use as alternative fuel in a direct injection diesel engine(Elsevier, 2009-02-15) Altun, Şehmus; Öner, CengizIn this study, a substitute fuel for diesel engines was produced from inedible animal tallow and its usability was investigated as pure biodiesel and its blends with petroleum diesel fuel in a diesel engine. Tallow methyl ester as biodiesel fuel was prepared by base-catalyzed transesterification of the fat with methanol in the presence of NaOH as catalyst. Fuel properties of methyl ester, diesel fuel and blends of them (5%, 20% and 50% by volume) were determined. Viscosity and density of fatty acid methyl ester have been found to meet ASTM D6751 and EN 14214 specifications. Viscosity and density of tallow methyl esters are found to be very close to that of diesel. The calorific value of biodiesel is found to be slightly lower than that of diesel. An experimental study was carried out in order to investigate of its usability as alternative fuel of tallow methyl ester in a direct injection diesel engine. It was observed that the addition of biodiesel to the diesel fuel decreases the effective efficiency of engine and increases the specific fuel consumption. This is due to the lower heating value of biodiesel compared to diesel fuel. However, the effective engine power was comparable by biodiesel compared with diesel fuel. Emissions of carbon monoxide (CO), oxides of nitrogen (NOx), sulphur dioxide (SO2) and smoke opacity were reduced around 15%, 38.5%, 72.7% and 56.8%, respectively, in case of tallow methyl esters (B100) compared to diesel fuel. Besides, the lowest CO, NOx emissions and the highest exhaust temperature were obtained for B20 among all other fuels. The reductions in exhaust emissions made tallow methyl esters and its blends, especially B20 a suitable alternative fuel for diesel and thus could help in controlling air pollution. Based on this study, animal tallow methyl esters and its blends with petroleum diesel fuel can be used a substitute for diesel in direct injection diesel engines without any engine modification.Öğe The comparison of engine performance and exhaust emission characteristics of sesame oil-diesel fuel mixture with diesel fuel in a direct injection diesel engine(Elsevier, 2008-01-09) Altun, Şehmus; Bulut, Hüsamettin; Öner, CengizThe use of vegetable oils as a fuel in diesel engines causes some problems due to their high viscosity compared with conventional diesel fuel. Various techniques and methods are used to solve the problems resulting from high viscosity. One of these techniques is fuel blending. In this study, a blend of 50% sesame oil and 50% diesel fuel was used as an alternative fuel in a direct injection diesel engine. Engine performance and exhaust emissions were investigated and compared with the ordinary diesel fuel in a diesel engine. The experimental results show that the engine power and torque of the mixture of sesame oil-diesel fuel are close to the values obtained from diesel fuel and the amounts of exhaust emissions are lower than those of diesel fuel. Hence, it is seen that blend of sesame oil and diesel fuel can be used as an alternative fuel successfully in a diesel engine without any modification and also it is an environmental friendly fuel in terms of emission parameters.Öğe Laws doku enerji ölçümü tabanli k-NN siniflandirici modeli ile iris tanima sistemi(IEEE, 20013-06-13) Acar, Emrullah; Özerdem, Mehmet SiraçBiyometrik tanıma teknolojisi genellikle çok pahallı ve son derece önemli güvenlik uygulamaları ile ilişkili olmuştur.İris tanıma sistemi, etkili biyometrik tanımasistemlerinden biridir. Bu çalışmada, farklı insanlardan elde edilen gözimgelerininiçerdiği irisdokuözelliklerinegörekişilerin tanınmasıamaçlanmıştır. İmgeler CASIAiris veritabanındanelde edilmiştir. İmge dokusuna duyarlı yeni yöntemlerdenbiri olanLawsDoku Enerji Ölçümü (Laws TEM) kullanılarak, iris dokusunun belirli yerelalanlarındanöznitelik vektörleri elde edilmiştir. kEn Yakın Komşu (k-NN) sınıflandırıcıparametrelerinden komşu sayısı(k) farklı değerlerde alınarak, elde edilen öznitelik vektörleri k-NN sınıflandırıcısı ile ayrıştırılmıştır. Farklı komşu sayılarına göre sisteminperformans değerlerikarşılaştırılmıştır. Sonuç olarak en yüksek ortalama performans,k-NNsınıflandırıcısınınk=1ve 2komşularıyapısında % 80.74olarak gözlemlenmiştir.Öğe Callus induction and plant regeneration from different explants of actinidia deliciosa(Springer Nature, 2008-10-31) Akbaş, Filiz; Işıkalan, Çiğdem; Namlı, SüreyyaIn this study, an efficient procedure was developed for callus induction and regeneration of kiwifruit (Actinidia deliciosa) using different organs of shoots developed under in vitro conditions. Effects of explants source and media (M1, 1.0 mg l-1 BA + 2.0 mg l-1 2,4-D-M 2, 1.0 mg l-1 NAA + 2.0 mg l-1 2,4-D) on initiation of callus were examined in order to obtain callus for organogenesis. The best callus for plant regeneration was obtained from leaf explants on Murashige and Skoog's medium (MS) supplemented with M2. Formation of callus from leaf of kiwifruit (A. deliciosa) was cultured in MS medium containing different concentration of N6-benzylaminopurin (BA; 0.0, 1.0, 2.0, 4.0, 6.0, 8.0 mg l-1) for callus proliferation and plant regeneration. Although the first shoot formation was appeared in medium containing 6.0 and 8.0 mg l-1 BA, the best shoots formation was obtained in medium with 4.0 mg l-1 BA.Öğe Electrical properties of organic–ınorganic semiconductor device based on rhodamine-101(SpringerLink, 2009-05) Güllü, Ömer; Turut, Abdulmecit; Yıldırım, Nezir; Çakar, MuzafferRhodamine-101 (Rh101) thin films on n-type Si substrates have been formed by means of evaporation, thus Sn/Rh101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n-Si devices are rectifying. The optical energy gaps have been determined from the absorption spectra in the wavelength range of 400 nm to 700 nm. Rh101 has been characterized by direct optical absorption with an optical edge at 2.05 ± 0.05 eV and by indirect optical absorption with␣an optical edge at 1.80 ± 0.05 eV. It was demonstrated that trap-charge-limited current is the dominant transport mechanism at large forward bias. A␣mobility value of μ = 7.31 × 10−6 cm2 V−1 s−1 for Rh101 has been obtained from the forward-bias current–voltage characteristics.Öğe Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures(Journal of Applied Physics, 2009-01) Güllü, Ömer; Turut, AbdulmecitIn this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si) MIS device had a good rectifying behavior. By using the forward bias I-V characteristics, the values of ideality factor (n) and barrier height (Phi(b)) for the Al/PSP/p-Si MIS diode were obtained as 1.45 and 0.81 eV, respectively. It was seen that the Phi(b) value of 0.81 eV calculated for the Al/PSP/p-Si MIS diode was significantly larger than value of 0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of Al/p-Si diode was achieved by using a thin interlayer of the PSP organic material. This has been attributed to the fact that the PSP organic interlayer increases the effective barrier height by influencing the space-charge region of Si. The interface-state density of the MIS diode was determined, and the interface-state density was found to vary from 3.00 x 10(13) to 2.99 x 10(12) eV(-1) cm(-2). (C) 2009 American Institute of Physics.Öğe Novel C2-symmetric macrocycles bearing diamide-diester groups: Synthesis and enantiomeric recognition for primary alkyl ammonium salts(American Chemical Society, 2008-03-12) Sünkür, Murat; Barış Cebe, Deniz; Hoşgören, Halil; Toğrul, MahmutWe synthesized a series of novel macrocycles with diamide−diester groups (S,S)-1, (S,S)-2, (S,S)-3, and (R,R)-1, derived from dimethyloxalate and amino alcohols by high dilution technique, and evaluated enantiomeric recognition properties of these macrocycles toward primary alkyl ammonium salts by 1H NMR titration. Taking into account the host employed, important differences were observed in the Ka values of (R)-Am and (S)-Am for (S,S)-1 and (R,R)-1 hosts, KS/KR = 5.55 and KR/KS = 3.65, ΔΔGo = 0.43 and −0.32 kJ mol-1, respectively. There seems a general tendency for the host to include the guests with the same absolute configuration.Öğe Electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements electrical characteristics of Co/n-Si schottky barrier diodes using I – V and C – V measurements(Chinese Physics Letters, 2009-06) Güllü, Ömer; Güler, Gülşen; Karataş, Şükrü; Bakkaloğlu, Ömer FarukElectrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I – V) and capacitance-voltage (C – V) techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0.76eV obtained from the C – V measurements is higher than that of the value 0.70eV obtained from the I – V measurements. The series resistance RS and the ideality factor n are determined from the d ln(I)/dV plot and are found to be 193.62Ω, and 1.34, respectively. The barrier height and the RS value are calculated from the H(I) – I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I – V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484 × 1011 cm−2eV−1 in (EC – 0.446) eV to 2.801 × 1010 cm−2eV−1 in (EC – 0.631) eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interfacial layer between the metal and the semiconductor.Öğe Analysis of the series resistance and interface state densities in metal semiconductor structures(Journal of Physics: Conference Series, 2009-03) Güllü, Ömer; Karataş, Şükrü; Güler, Gülşen; Bakkaloğlu, Ömer FarukThe electrical properties of Co/n-Si metal-semiconductor (MS) Schottky structure investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the structure such as barrier height, ideality factor and series resistance have been determined from the I-V measurements. The values of barrier height obtained from Norde’s function were compared with those from Cheung functions, and it was seen that there was a good agreement between barrier heights from both methods. The series resistance values calculated with Cheung’s two methods were compared and seen that there was an agreement with each other. However, the values of series resistance obtained from Cheung functions and Norde’s functions are not agreeing with each other. Because, Cheung functions are only applied to the non-linear region (high voltage region) of the forward bias I–V characteristics. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show that the presence of thin interfacial layer between the metal and semiconductorÖğe The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes(Elsevier, 2009-11-03) Güllü, Ömer; Karataş, Şükrü; Güler, Gülşen; Bakkaloğlu, Ömer FarukWe have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/n-Si metal–semiconductor (MS) structures with a doping density of about 1015 cm−3. The barrier heights for the Co/n-type Si metal–semiconductor structures from the current–voltage (I–V) characteristics varied from 0.64 to 0.70 eV, the ideality factor n varied from 1.18 to 1.26, and from reverse bias capacitance–voltage (C−2–V) characteristics the barrier height varied from 0.68 to 0.81 eV. The experimental barrier height distributions obtained from the I–V and C−2–V characteristics were fitted by a Gaussian distribution function, and their mean values were found to be 0.67 and 0.75 eV, respectively. Furthermore, the lateral homogeneous BH value of approximately 0.81 eV for Co/n-Si metal–semiconductor structures was obtained from the linear relationship between experimental effective BHs and ideality factors.
