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2011 - 20192
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Konu: Thin Films × WoS Q: Q3 ×

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  • Küçük Resim
    Öğe
    On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures
    (Elsevier, 2011-02-15) Pakma, Osman; Serin, Necmi; Serin, Saliha Tülay; Altındal, Şemsettin
    The energy distribution profile of the interface states (Nss) of Al/TiO2/pSi (MIS) structures prepared using the solgel method was obtained from the forward bias currentvoltage (IV) characteristics by taking into account both the bias dependence of the effective barrier height (φe) and series resistance (Rs) at room temperature. The main electrical parameters of the MIS structure such as ideality factor (n), zero-bias barrier height (φb0) and average series resistance values were found to be 1.69, 0.519 eV and 659 Ω, respectively. This high value of n was attributed to the presence of an interfacial insulator layer at the Al/pSi interface and the density of interface states (Nss) localized at the Si/TiO2 interface. The values of Nss localized at the Si/TiO2 interface were found with and without the Rs at 0.25-Ev in the range between 8.4×10 13 and 4.9×1013 eV-1 cm-2. In addition, the frequency dependence of capacitancevoltage (CV) and conductancevoltage (G/ω-V) characteristics of the structures have been investigated by taking into account the effect of Nss and R s at room temperature. It can be found out that the measured C and G/ω are strongly dependent on bias voltage and frequency.
  • Küçük Resim
    Öğe
    Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
    (Scientific Publishers, 2019) Güllü, Ömer; Çankaya, Murat; Rajagopal Reddy, Varra
    In the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier enhancement. Interfacial properties of the MIS diode with GO interlayer are extracted from current–voltage (I–V) measurement. The simple diode parameters such as barrier height and ideality factor are extracted from I–V plots, and the values are compared with those of conventional Al/n-InP MS contact. The value of barrier height (BH) for the Al/GO/n-InP contact is found as 0.85 eV. The BH value of 0.85 eV of the Al/GO/n-InP MIS structure is as high as around 100% compared to the value of 0.43 eV of the Al/n-InP reference contacts. We have showed that the value of 0.85 eV is one of the highest values presented for reference contacts with an interlayer.